INC6005AP1 for low frequency amplify application silicon npn epitaxial type isahaya electronics corporation description INC6005AP1 is a silicon npn transistor. it is designed with high voltage. feature ?small package for easy mounting. ?high voltage v ceo = 400v application dc-dc converter, high voltage switching. outline drawing unit m aximum rating ta=25 symbol parameter rating unit v cbo collector to base voltage 400 v v ebo emitter to base voltage 7 v v ceo collector to emitter voltage 400 v i c collector current 100 ma p c collector dissipation(ta=25) 500 mw t j junction temperature 150 t stg storage temperature -55150 electrical characteristics ta=25 symbol parameter test conditions limits unit min typ max v (br)cbo c to b break down voltage i c =50ai e =0ma 400 - - v v (br)ebo e to b break down voltage i e =50ai c =0ma 7 - - v v (br)ceo c to e break down voltage i c =1mar be = 400 - - v i cbo collector cut off current v cb =400vi e =0ma - - 1 a i ebo emitter cut off current v eb =6vi c =0ma - - 1 a dc forward current gain v ce =10vi c =10ma 82 - 280 - v ce(sat) c to e saturation voltage i c =10mai b =1ma - - 0.5 v ft gain bandwidth product v ce =20v, i e =-10ma - 70 - mhz cob collector output capacitance v ce =10v, i e =0ma, f=1mhz - 3.3 - pf bd w type name lot h fe item marking ?O?A : ?? : ? : ?` eiaj : sc-62 jedec : 4.2 max e c b 4.6 max 1.6 2.5 3.0 1.5 0.53 ma x 0.48 max 0.8 min 1.5 0.4 ?` terminal connector eemitter ccollector bbase jedecD marking jeita:sc-62 jedec:sot-89
INC6005AP1 for low frequency amplify application silicon npn epitaxial type isahaya electronics corporation typicial characteristics 10 100 1000 0.1 1 10 100 dc forward current gain fe(-) collector current ic(ma) dc forward current gain vs. collector current vce=10v ta=-40 ta=25 ta=100 0 20 40 60 80 100 0 0.2 0.4 0.6 0.8 1 collector current ic(ma) base to emitter voltage vbe(v) common emitter transfer vce=10v ta=-40 ta=25 ta=100 10 100 1000 0.1 1 10 100 collector current ic(ma) collector to emitter saturation voltage vs. collector current ta=-40 ta=25 ta=100 ic/ib=10 collector to emitter saturation voltage vce(sat)(mv) 0.1 1 10 0.1 1 10 100 collector current ic(ma) base to emitter saturation voltage vs. collector current ta=-40 ta=25 ta=100 ic/ib=10 base to emitter saturation voltage vbe(sat)(v) 0 50 100 150 -1 -10 -100 gain band width product ft(mhz) emitter current ie(ma) gain band width product vs. emitter current ta=25 vce=20v 0 10 20 0.1 1 10 100 collector output capacitance cob(pf) collector to base voltage vcb(v) collector output capacitance vs. collector to base voltage ta=25 f=1mhz ie=0
INC6005AP1 for low frequency amplify application silicon npn epitaxial type isahaya electronics corporation 0 0.1 0.2 0.3 0.4 0.5 0.6 0 50 100 150 200 collector dissipation pc (w) ambient temperature ta () collector dissipation vs. ambient temperature
6 - 41 tsukuba, isahaya, nagasaki, 854 - 0065 japan keep safety first in your circuit designs! isahaya electronics corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility th at trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropri ate measures such as ( 1) placement of substitutive, auxiliary, ( 2) use of non - farmable material or ( 3) prevention against any malfunct ion or mishap. notes regarding these materials these materials are intended as a reference to our customers in the selection of the isah aya products best suited to the customer?s application; they don't convey any license under any intellectual prop erty rights, or any other rights, belonging isahaya or third party. isahaya electronics corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagram s, charts or circuit application examples contained in these materials . all information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, a nd are subject to change by isahaya electronics corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact isahaya electronics corporation or an authorized isahaya products distr ibutor for the latest product information before purchasing product listed herein. isahaya electronics corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human lif e is potentially at stake. please contact isahaya electronics corporation or an authorized isahaya products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transpor tation, vehicular, medical, aerospace, nuclear, or undersea repeater use. the prior written approval of isahaya electronics corporation is necessary to reprint or reproduce in whole or in part these materials. if these products or technolo gies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to t he export control laws and regulations of japan and/or the country of destination is prohibited. please contact isahaya electronics corporation or authorized isahaya products distributor for further details on these materials or the product s contained therein. apr.2013
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